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Senior Principal Process Development Engineer - Wide Bandgap Technology SiC/GaN - Nexperia
Software Engineer
Lead the development and industrialization of next‑generation SiC MOSFET and GaN HEMT technologies, driving process integration, architecture definition, and scaling across global fabs and external foundries.
About the role
Key Responsibilities
- Lead end‑to‑end development, scaling, and industrialization of SiC MOSFET and GaN HEMT technologies across internal fabs and external foundries.
- Act as the technical authority in wide bandgap process integration, defining architecture and driving innovation.
- Own and deliver process design, optimization, and qualification plans, ensuring manufacturability and yield targets.
- Collaborate with cross‑functional teams (design, reliability, supply chain) to align process capabilities with product requirements.
- Mentor and guide junior engineers, fostering a culture of continuous improvement and technical excellence.
Requirements
- Extensive experience in SiC and GaN process development and industrialization.
- Deep knowledge of MOSFET and HEMT device physics, fabrication, and testing.
- Proven track record of leading large‑scale process roll‑outs and driving yield improvements.
- Strong analytical skills with ability to translate complex technical challenges into actionable solutions.
- Excellent communication and leadership skills, capable of influencing stakeholders at all levels.
Skills
software developmentsystem designproblem solving