Principal Engineer - Flash Transition Layer FTL - SK hynix memory solutions America Inc.

At SK Hynix Memory Solution, we're at the forefront of semiconductor innovation, developing advanced memory solutions that power everything from smartphones to data centers. As a global leader in DRAM and NAND flash technologies, we drive the evolution of advancing mobile technology, empowering cloud computing, and pioneering future technologies. Our cutting-edge memory technologies are essential in today's most advanced electronic devices and IT infrastructure, enabling enhanced performance and user experiences across the digital landscape.

We're looking for innovative minds to join our mission of shaping the future of technology. At SK Hynix Memory, you'll be part of a team that's pioneering breakthrough memory solutions while maintaining a strong commitment to sustainability. We're not just adapting to technological change – we're driving it, with significant investments in artificial intelligence, machine learning, and eco-friendly solutions and operational practices. As we continue to expand our market presence and push the boundaries of what's possible in semiconductor technology, we invite you to be part of our journey to creating the next generation of memory solutions that will define the future of computing.

Job Responsibilities

• FTL (Flash Translation Layer) design, implement and debugging
• Design, implement, and evaluate real-time embedded system firmware for SSD products.
• Perform firmware code review, analysis and improvement.
• Perform firmware focused SSD system integration, performance profiling, validation and debugging.
• Perform failure analysis and corrective firmware actions via collaboration with other stakeholders until issue resolution.

Desired Skills and Experience:

• 3+ years of hands-on FTL development experience in SSD..
• 5+ years of development experience in embedded controller environments.
• QLC related experiences are preferred
• Proficient in firmware and software programming (C/C++, assembly, script languages)
• Experience with at least one storage protocol; PCIe/NVMe, SATA, SCSI
• Experience in the NAND flash storage device application and/or testing is a plus but not required
• Experience with firmware debugging tools such as JTAG and In-Circuit Emulator.
• Experience with multi-ARM core based development is a plus.
• Ability to work creatively and analytically in a problem- solving environment.
• Ability to jump into different areas of the system for investigation and analysis
• Good verbal and written skills for communication and documentation.
• Self-motivated, good team player.

Education

• BS in either Computer Science or Electrical Engineering; MS is preferred.

COMPENSATION: $200,000/yr - $240,000/yr

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